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| Ion implantation solution

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Ion implantation technology refers to doping boron, phosphorus and arsenic plasma on the surface of semiconductor wafers to change its electrical characteristics and device conductivity, or to use non-doped elements such as germanium and carbon to achieve the goal of modifying the surface properties of wafer materials. The ion source is the core component of the ion implanter, mainly composed of various tungsten and molybdenum components. The ion implantation industry has very stringent requirements for impurity elements. Any excess of impurity elements may cause contamination and failure of ion implantation materials. Therefore, tungsten or molybdenum materials for ion implantation must first meet their strict requirements for chemical purity .
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 In addition, density is also an important performance reference index, because most of the tungsten or molybdenum parts in the ion source will be bombarded or corroded by electrons during use. Low density will seriously affect the service life of parts. Good quality comes from the material. UMM is the first manufacturer of ultra-high purity tungsten and molybdenum powder raw materials for semiconductor target grade (purity exceeding 5N) that has achieved industrial scale production in China. For tungsten and molybdenum parts for ion implantation, customers are recommended to use 4N Or 5N grade high-purity raw materials, manufactured by powder metallurgy, forging and rolling, precision machining and other processes

 


 

Tungsten materials and finished parts for ion implantation
It is manufactured using 4N or 5N grade high-purity raw materials through powder metallurgy, forging and rolling, precision machining and other processes.
  Molybdenum materials and finished parts for ion implantation
It is manufactured using 4N or 5N grade high-purity raw materials through powder metallurgy, forging and rolling, precision machining and other processes.

 

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欧泰稀材
High purity tungsten powder
High purity tungsten powder
Specification: -200 mesh
Purity: 4N-6N
Uses: Used to prepare high-purity tungsten targets and high-purity tungsten alloy targets, to prepare cemented carbide tools, powder metallurgy, diamond tools, high-density alloys, contacts, refractory alloys. Tungsten alloys, such as tungsten molybdenum alloy, tungsten rhenium alloy, tungsten copper alloy and high density tungsten alloy, etc.
Tungsten and molybdenum ion implantation parts
Tungsten and molybdenum ion implantation parts
Ion implantation is a kind of material surface modification high and new technology that has been vigorously developed and widely used internationally in the past 30 years. It has realized the optimization of the surface performance of the material or can obtain some new excellent performance. Due to the unique and prominent features of this high-tech, it is a very important technology in modern integrated circuit manufacturing. It uses an ion implanter to achieve semiconductor doping and change the conductivity of the semiconductor and the structure of the transistor.
High purity molybdenum powder
High purity molybdenum powder
Purity: 3N8
Granularity: -200 mesh
Application: high-performance precision alloy casting; high-precision electronics industry, such as thin film transistor liquid crystal displays (TFT-LCD); wiring materials for large-scale integrated circuits in the semiconductor industry; new thin-film solar cells in the solar industry
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