CT machine X-ray tube anode rotating target
When the CT tube is working, the anode target produces X-rays under the bombardment of high-energy electron beams, but the energy conversion efficiency is very low. Only about 1% of the energy is converted into X-ray energy, and the remaining 99% of the energy is converted into heat energy. The local temperature can be as high as 2600°C. Therefore, the rotating anode target needs to have the characteristics of high high temperature strength, good thermal shock resistance, and fast heat dissipation. Therefore, the density of the target material, the content of alloy impurity elements, and the brazing bonding strength of graphite and molybdenum alloys affect the service life of the target. Key factor.
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When the CT tube is working, the anode target produces X-rays under the bombardment of high-energy electron beams, but the energy conversion efficiency is very low. Only about 1% of the energy is converted into X-ray energy, and the remaining 99% of the energy is converted into heat energy. The local temperature can be as high as 2600°C. Therefore, the rotating anode target needs to have the characteristics of high high temperature strength, good thermal shock resistance, and fast heat dissipation. Therefore, the density of the target material, the content of alloy impurity elements, and the brazing bonding strength of graphite and molybdenum alloys affect the service life of the target. Key factor.
MOCVD irreplaceable "rhenium" heater member
Tungsten heating devices will become brittle after being recrystallized after being used at high temperature, and will easily break under impact or vibration. Compared with tungsten, rhenium has a higher recrystallization temperature, and the recrystallized rhenium is not a brittle material, but its strength is reduced. As a non-stressed heating device, it still has good working ability and has the best high temperature stability. High creep strength. Therefore, rhenium is used to manufacture MOCVD heating devices. It is the most appropriate choice in consideration of performance and cost. No other material can replace it.
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Tungsten heating devices will become brittle after being recrystallized after being used at high temperature, and will easily break under impact or vibration. Compared with tungsten, rhenium has a higher recrystallization temperature, and the recrystallized rhenium is not a brittle material, but its strength is reduced. As a non-stressed heating device, it still has good working ability and has the best high temperature stability. High creep strength. Therefore, rhenium is used to manufacture MOCVD heating devices. It is the most appropriate choice in consideration of performance and cost. No other material can replace it.
Application and development of high purity metal materials
Pure tungsten materials with a purity of 99.999% (5N) and 99.9999% (6N) are called high-purity tungsten. The total impurity element content of high-purity tungsten should be controlled between 1 ppm and 10 ppm (10-6～10-5). For some special impurity elements, such as radioactive elements, alkali metal elements, heavy metal elements and gases Elements etc. also have special requirements. Since the radioactive elements U and Th have a rays, they can cause "soft errors" in the memory circuit and affect the quality and performance of the circuit. Therefore, in the impurity elements of high-purity tungsten, the content of U and Th should be particularly low. Said it should be as low as 1 ppb (that is, 1×10-9) or less, and as low as 0.1 ppb (1×10-10). In addition, high-purity tungsten also has strict requirements on the content of alkali metal elements (K, Na, Li). High-purity tungsten is mainly prepared into pure metal targets or alloy targets, and functional films that meet the requirements are obtained by magnetron sputtering. Because high-purity tungsten (5 N or 6 N) has high resistance to electron migration, high-temperature stability and the ability to form stable silicides, it is used as a gate, connection and barrier metal in the form of thin films in the electronics industry. High-purity tungsten and tungsten silicon and tungsten-titanium sputtering targets are often applied in the form of thin films for ultra-large-scale integrated circuits as resistance layers, diffusion barriers, transition layers, etc., and as gate materials and connections in metal oxide semiconductor transistors Materials, etc. The rapid development of modern electronics, semiconductors, and photovoltaic industries has almost exacting and perfect purity requirements for materials, especially metal materials. High-purity tungsten plays a very important role due to its extremely high performance.
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Pure tungsten materials with a purity of 99.999% (5N) and 99.9999% (6N) are called high-purity tungsten. The total impurity element content of high-purity tungsten should be controlled between 1 ppm and 10 ppm (10-6～10-5). For some special impurity elements, such as radioactive elements, alkali metal elements, heavy metal elements and gases Elements etc. also have special requirements. Since the radioactive elements U and Th have a rays, they can cause "soft errors" in the memory circuit and affect the quality and performance of the circuit. Therefore, in the impurity elements of high-purity tungsten, the content of U and Th should be particularly low. Said it should be as low as 1 ppb (that is, 1×10-9) or less, and as low as 0.1 ppb (1×10-10). In addition, high-purity tungsten also has strict requirements on the content of alkali metal elements (K, Na, Li). High-purity tungsten is mainly prepared into pure metal targets or alloy targets, and functional films that meet the requirements are obtained by magnetron sputtering. Because high-purity tungsten (5 N or 6 N) has high resistance to electron migration, high-temperature stability and the ability to form stable silicides, it is used as a gate, connection and barrier metal in the form of thin films in the electronics industry. High-purity tungsten and tungsten silicon and tungsten-titanium sputtering targets are often applied in the form of thin films for ultra-large-scale integrated circuits as resistance layers, diffusion barriers, transition layers, etc., and as gate materials and connections in metal oxide semiconductor transistors Materials, etc. The rapid development of modern electronics, semiconductors, and photovoltaic industries has almost exacting and perfect purity requirements for materials, especially metal materials. High-purity tungsten plays a very important role due to its extremely high performance.
