High-purity tungsten powder can be used to make special high-temperature resistant devices with high requirements on material performance or service life, and can also be used for pure tungsten element addition in the field of precision alloy casting; in addition, high-purity tungsten powder and its silicide can be used for super large A scale integrated circuit is used as a resistance layer, a diffusion barrier layer, etc., and as a gate material, a connection material, etc. in a metal oxide semiconductor type transistor.

Ultrapure tungsten (5N or 6N) is often used as gate, connection and barrier metal in the electronics industry in the form of sputtered films due to its high resistance to electron migration, high temperature stability, and the ability to form stable silicides. Ultra-high-purity tungsten and its composite materials, tungsten-silicon or tungsten-titanium, are often made into high-purity sputtering targets, covered in thin films on substrates or other thin-film layers, and used in ultra-large-scale integrated circuits as resistance layers, diffusion barrier layers, etc. As well as gate materials and connection materials in metal oxide semiconductor transistors.