High purity tantalum sputtering targets are widely used in the electronic information product manufacturing industry. As a sputtering barrier, high purity copper will gradually replace aluminum as the material for metallization wiring on silicon wafers, which can be more widely used. The grain size of high purity tantalum sputtering target material, the uniformity of the structure and the grain orientation distribution have a crucial influence on the sputtering performance. With the increase in the size of semiconductor wafers, the size of sputtering targets is also becoming larger. In order to ensure the consistency of quality between the same target and different batches of large-size semiconductor sputtering targets, so as to ensure that different batches The quality and yield of the sputtered film. More stringent requirements are put forward for the uniformity and orientation distribution control of the microstructure in the thickness direction of the target material and the direction of the sputtering surface.

Plastic deformation and heat treatment process is the key production process to control the microstructure and orientation control of ta sputtering target, including homogenization heat treatment of ingot, circumferential/axial forging billeting, annealing treatment, cold rolling, recrystallization annealing, etc. Process. Generally, the original billet after the circumferential/axial forging billet can be adjusted to control the quality of the target material through annealing treatment, cold rolling pass deformation, recrystallization heat treatment, etc.

At present, due to the insufficient understanding of high purity tantalum microstructure evolution during plastic processing and heat treatment and its relationship with processing technology, the microstructure and orientation control of high purity Ta sputtering target is processed by high purity Ta sputtering target. Key technical points. Therefore, how to control the uniformity of the structure in the thickness direction as much as possible under the premise of ensuring the uniformity of the microstructure and orientation control on the sputtering surface is an urgent problem in the field of high purity tantalum sputtering target processing.