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The development prospects of Tantalum target

The development prospects of Tantalum target

  • Categories:News
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  • Time of issue:2021-09-20 18:09
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(Summary description)Target grain size and distribution of Tantalum target: Generally, the target material has a polycrystalline structure, and the grain size can be on the order of micrometers to millimeters.

The development prospects of Tantalum target

(Summary description)Target grain size and distribution of Tantalum target: Generally, the target material has a polycrystalline structure, and the grain size can be on the order of micrometers to millimeters.

  • Categories:News
  • Author:
  • Origin:
  • Time of issue:2021-09-20 18:09
  • Views:0
Information

Target grain size and distribution of Tantalum target: Generally, the target material has a polycrystalline structure, and the grain size can be on the order of micrometers to millimeters. For targets of the same composition, the sputtering rate of fine-grained targets is faster than that of coarse-grained Tantalum targets, while targets with smaller grain sizes have a more uniform deposition film thickness distribution.

Tantalum target

The target material manufactured by the vacuum melting method can ensure that there are no holes in the block, but the Tantalum target manufactured by the powder metallurgy method may contain a certain number of holes. The presence of holes will cause abnormal discharge during the sputtering process, resulting in impurity particles. In addition, due to its low density, targets with holes are easily broken during operation, transportation, installation and operation.

The Tantalum target manufacturer tells you that the processing technology of Tantalum target: The processing technology of sputtering target used in integrated circuit manufacturing mainly includes smelting, homogenization, pressure processing and mechanical processing. On the basis of strictly controlling the purity of the target material, the chromium target material, the niobium target material and the titanium aluminum target material can adjust the grain orientation and grain size of the target material by optimizing the pressure treatment process, heat treatment conditions and mechanical processing conditions.
Target impurity control for high-purity chromium targets: If there are too many inclusions in the target, particles may form on the wafer during the sputtering process, resulting in short-circuit or disconnection of interconnections, which seriously affects performance.

Most of the inclusions in Tantalum target are formed during the smelting and casting process, mainly composed of oxides, but also include nitrides, carbides, hydrides, sulfides, silicides, etc., so they should be used in the casting process . Before Tantalum target is cast, oxides and other slag on the surface of the melt should be removed. Generally, they are melted and cast in a vacuum or oxygen-free environment. The price of Tantalum target on the market is also different.

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