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Gallium Arsenide
1砷化镓
1砷化镓
Gallium Arsenide
Purity:6N
integrated circuit substrate, infrared detector, gamma photon detector, gallium arsenide solar cell;
0.0 0.0
Product description

Chemical formula GaAs. Dark gray solid, melting point 1238°C. It can exist stably in the air below 600°C and is not corroded by non-oxidizing acids. Gallium arsenide is an important semiconductor material.
Molecular mass: 144.6446
CAS Number: 1303-00-0
Melting point: 1238°C
Density: 5.37g/cm3
Appearance: black gray solid
Lattice constant: 5.65×10-10m
Band gap: 1.4 eV
Synthesis process: vacuum smelting of high-purity arsenic and high-purity gallium, and zone melting after subsequent treatment;
Purity: 6N (99.9999%)
Detection: GDMS (all impurity elements are less than 1ppm), XRD;
Packing: three-layer vacuum packing or argon gas protection;
Application: integrated circuit substrate, infrared detector, gamma photon detector, gallium arsenide solar cell;

Keyword:
Gallium Arsenide
GaAs
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