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2010-2013

2010-2013

(Summary description)Beginning in 2010, the company moved the Zhuzhou laboratory to the old factory building of Zhongyi Refrigerator Factory in Tianxin District, Changsha, and passed the qualification assessment of the "Safety Production Standardization Level 3 Enterprise" by the Changsha Work Safety Supervision Administration;

2010-2013

(Summary description)Beginning in 2010, the company moved the Zhuzhou laboratory to the old factory building of Zhongyi Refrigerator Factory in Tianxin District, Changsha, and passed the qualification assessment of the "Safety Production Standardization Level 3 Enterprise" by the Changsha Work Safety Supervision Administration;

Information

Beginning in 2010, the company moved the Zhuzhou laboratory to the old factory building of Zhongyi Refrigerator Factory in Tianxin District, Changsha, and passed the qualification assessment of the "Safety Production Standardization Level 3 Enterprise" by the Changsha Work Safety Supervision Administration;

UMM plans to cooperate with China Aerospace Materials Research Institute to develop and test "refractory metal special powder materials".

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Next: 2009.3

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CT machine X-ray tube anode rotating target
CT machine X-ray tube anode rotating target
When the CT tube is working, the anode target produces X-rays under the bombardment of high-energy electron beams, but the energy conversion efficiency is very low. Only about 1% of the energy is converted into X-ray energy, and the remaining 99% of the energy is converted into heat energy. The local temperature can be as high as 2600°C. Therefore, the rotating anode target needs to have the characteristics of high high temperature strength, good thermal shock resistance, and fast heat dissipation. Therefore, the density of the target material, the content of alloy impurity elements, and the brazing bonding strength of graphite and molybdenum alloys affect the service life of the target. Key factor.
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When the CT tube is working, the anode target produces X-rays under the bombardment of high-energy electron beams, but the energy conversion efficiency is very low. Only about 1% of the energy is converted into X-ray energy, and the remaining 99% of the energy is converted into heat energy. The local temperature can be as high as 2600°C. Therefore, the rotating anode target needs to have the characteristics of high high temperature strength, good thermal shock resistance, and fast heat dissipation. Therefore, the density of the target material, the content of alloy impurity elements, and the brazing bonding strength of graphite and molybdenum alloys affect the service life of the target. Key factor.
MOCVD irreplaceable "rhenium" heater member
MOCVD irreplaceable "rhenium" heater member
Tungsten heating devices will become brittle after being recrystallized after being used at high temperature, and will easily break under impact or vibration. Compared with tungsten, rhenium has a higher recrystallization temperature, and the recrystallized rhenium is not a brittle material, but its strength is reduced. As a non-stressed heating device, it still has good working ability and has the best high temperature stability. High creep strength. Therefore, rhenium is used to manufacture MOCVD heating devices. It is the most appropriate choice in consideration of performance and cost. No other material can replace it.
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Tungsten heating devices will become brittle after being recrystallized after being used at high temperature, and will easily break under impact or vibration. Compared with tungsten, rhenium has a higher recrystallization temperature, and the recrystallized rhenium is not a brittle material, but its strength is reduced. As a non-stressed heating device, it still has good working ability and has the best high temperature stability. High creep strength. Therefore, rhenium is used to manufacture MOCVD heating devices. It is the most appropriate choice in consideration of performance and cost. No other material can replace it.
About rhenium technology
About rhenium technology
Rhenium is a sparse, refractory metal. Scattered means that the content of rhenium in the earth's crust is scarce and dispersed, and refractory means that the melting point of rhenium metal is extremely high, with a melting point of 3180°C, second only to tungsten, ranking second among all metals. Because of its compound's excellent properties such as catalytic activity, high temperature resistance, and corrosion resistance, it is mainly used in petroleum smelting catalysts, thermoelectric superalloys, electronic tube structural materials, special aerospace alloys, and environmental protection.
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Rhenium is a sparse, refractory metal. Scattered means that the content of rhenium in the earth's crust is scarce and dispersed, and refractory means that the melting point of rhenium metal is extremely high, with a melting point of 3180°C, second only to tungsten, ranking second among all metals. Because of its compound's excellent properties such as catalytic activity, high temperature resistance, and corrosion resistance, it is mainly used in petroleum smelting catalysts, thermoelectric superalloys, electronic tube structural materials, special aerospace alloys, and environmental protection.
About MOCVD
About MOCVD
2020-12-01
MOCVD (Metal Organic Chemical Vapor Deposition, metal organic chemical vapor deposition) technology, also known as OMVPE, MOVPE, etc., is a new technology for preparing compound semiconductor single film proposed by Rockwell in 1968. The MOCVD method is to decompose and react the metal organic compound diluted in the carrier gas and the hydride of the V or VI element on the heated epitaxial substrate, and the reaction product is deposited on the epitaxial substrate to form A kind of epitaxial film technology, the use of this technology can grow nano-level high-quality film, it is precisely because of this feature that MOCVD technology is widely used in the production and manufacturing of semiconductor devices. T
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MOCVD (Metal Organic Chemical Vapor Deposition, metal organic chemical vapor deposition) technology, also known as OMVPE, MOVPE, etc., is a new technology for preparing compound semiconductor single film proposed by Rockwell in 1968. The MOCVD method is to decompose and react the metal organic compound diluted in the carrier gas and the hydride of the V or VI element on the heated epitaxial substrate, and the reaction product is deposited on the epitaxial substrate to form A kind of epitaxial film technology, the use of this technology can grow nano-level high-quality film, it is precisely because of this feature that MOCVD technology is widely used in the production and manufacturing of semiconductor devices. T
Application and development of high purity metal materials
Application and development of high purity metal materials
Pure tungsten materials with a purity of 99.999% (5N) and 99.9999% (6N) are called high-purity tungsten. The total impurity element content of high-purity tungsten should be controlled between 1 ppm and 10 ppm (10-6~10-5). For some special impurity elements, such as radioactive elements, alkali metal elements, heavy metal elements and gases Elements etc. also have special requirements. Since the radioactive elements U and Th have a rays, they can cause "soft errors" in the memory circuit and affect the quality and performance of the circuit. Therefore, in the impurity elements of high-purity tungsten, the content of U and Th should be particularly low. Said it should be as low as 1 ppb (that is, 1×10-9) or less, and as low as 0.1 ppb (1×10-10). In addition, high-purity tungsten also has strict requirements on the content of alkali metal elements (K, Na, Li). High-purity tungsten is mainly prepared into pure metal targets or alloy targets, and functional films that meet the requirements are obtained by magnetron sputtering. Because high-purity tungsten (5 N or 6 N) has high resistance to electron migration, high-temperature stability and the ability to form stable silicides, it is used as a gate, connection and barrier metal in the form of thin films in the electronics industry. High-purity tungsten and tungsten silicon and tungsten-titanium sputtering targets are often applied in the form of thin films for ultra-large-scale integrated circuits as resistance layers, diffusion barriers, transition layers, etc., and as gate materials and connections in metal oxide semiconductor transistors Materials, etc. The rapid development of modern electronics, semiconductors, and photovoltaic industries has almost exacting and perfect purity requirements for materials, especially metal materials. High-purity tungsten plays a very important role due to its extremely high performance.
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Pure tungsten materials with a purity of 99.999% (5N) and 99.9999% (6N) are called high-purity tungsten. The total impurity element content of high-purity tungsten should be controlled between 1 ppm and 10 ppm (10-6~10-5). For some special impurity elements, such as radioactive elements, alkali metal elements, heavy metal elements and gases Elements etc. also have special requirements. Since the radioactive elements U and Th have a rays, they can cause "soft errors" in the memory circuit and affect the quality and performance of the circuit. Therefore, in the impurity elements of high-purity tungsten, the content of U and Th should be particularly low. Said it should be as low as 1 ppb (that is, 1×10-9) or less, and as low as 0.1 ppb (1×10-10). In addition, high-purity tungsten also has strict requirements on the content of alkali metal elements (K, Na, Li). High-purity tungsten is mainly prepared into pure metal targets or alloy targets, and functional films that meet the requirements are obtained by magnetron sputtering. Because high-purity tungsten (5 N or 6 N) has high resistance to electron migration, high-temperature stability and the ability to form stable silicides, it is used as a gate, connection and barrier metal in the form of thin films in the electronics industry. High-purity tungsten and tungsten silicon and tungsten-titanium sputtering targets are often applied in the form of thin films for ultra-large-scale integrated circuits as resistance layers, diffusion barriers, transition layers, etc., and as gate materials and connections in metal oxide semiconductor transistors Materials, etc. The rapid development of modern electronics, semiconductors, and photovoltaic industries has almost exacting and perfect purity requirements for materials, especially metal materials. High-purity tungsten plays a very important role due to its extremely high performance.
"Deep Sea Monster" made of titanium rhenium alloy
"Deep Sea Monster" made of titanium rhenium alloy
On April 22, 1978, the Severodvinsk Shipyard in the port city of Arkhangelsk Oblast, located in the northern part of Russia and Europe, began to build a mysterious new M-class strategic attack nuclear submarine. The boat adopts a double-layer shell structure design, and creatively adds the rarefied and refractory metal “rhenium” to the “space metal” titanium alloy to make the submarine shell. The emergence of the K278 strategic nuclear submarine once again demonstrated to the world the manufacturing capabilities of the "battle nation" in the military industry. At that time, in order to produce the world's strongest strategic nuclear submarine, the former Soviet Union did not hesitate to pay for it. It is important to know that the global annual output of metal rhenium was only one to twenty tons.
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On April 22, 1978, the Severodvinsk Shipyard in the port city of Arkhangelsk Oblast, located in the northern part of Russia and Europe, began to build a mysterious new M-class strategic attack nuclear submarine. The boat adopts a double-layer shell structure design, and creatively adds the rarefied and refractory metal “rhenium” to the “space metal” titanium alloy to make the submarine shell. The emergence of the K278 strategic nuclear submarine once again demonstrated to the world the manufacturing capabilities of the "battle nation" in the military industry. At that time, in order to produce the world's strongest strategic nuclear submarine, the former Soviet Union did not hesitate to pay for it. It is important to know that the global annual output of metal rhenium was only one to twenty tons.
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